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參數(shù)資料
| 型號： | STD2NM60T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直|甲（丁）|對252AA |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 174K |
| 代理商： | STD2NM60T4 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.78
100
1.5
275
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
2
A
E
AS
20
mJ
E
AR
1.5
mJ
I
AR
1.2
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
20 V
T
c
= 125
o
C
25
250
±
100
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 1 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
4.5
5.5
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
2
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1 A
0.65
1
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
200
35
12
270
50
18
pF
pF
pF
STD2N50
2/10
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