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參數(shù)資料
| 型號： | STD2NB80-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 800V-4.6Ω-1.9A- IPAK PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道800V的-4.6Ω- 1.9A -像是iPak PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 47K |
| 代理商： | STD2NB80-1 |
STD2NB80-1
N - CHANNEL 800V - 4.6
- 1.9A - IPAK
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 4.6
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
FOR SMD DPAK VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
an
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
±
30
V
V
GS
V
I
D
I
D
1.9
A
1.2
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
7.6
A
P
tot
50
W
Derating Factor
0.4
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
2 A, di/dt
≤
100 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
150
TYPE
V
DSS
R
DS(on)
< 6.5
I
D
STD2NB80-1
800V
1.9 A
3
2
1
IPAK
TO-251
(Suffix "-1")
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NC40 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC40-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC45-1 | 功能描述:MOSFET N-Ch, 450V-4.1ohms 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NC45-1 | 制造商:STMicroelectronics 功能描述:MOSFET N I-PAK |
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