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參數(shù)資料
| 型號： | STD1NC70ZT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 1.4A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 700V的五（巴西）直| 1.4AI（四）|對252AA |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 171K |
| 代理商： | STD1NC70ZT4 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 1 A
V
GS
= 10 V
8
13
12
20
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 2 A
V
GS
= 10 V
180
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 2 A
V
GS
= 10 V
15
5
6
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 2 A
V
GS
= 10 V
8
15
8
12
25
12
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
1.6
6.4
A
A
V
SD
(
)
t
rr
I
SD
= 1.6 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2 A
V
DD
= 100 V
(see test circuit, figure 5)
400
4
20
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD1NA60
3/10
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