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參數(shù)資料
| 型號(hào)： | STD25NF10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道100V的- 0.033ohm - 25A條的DPAK低柵極電荷STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 155K |
| 代理商： | STD25NF10 |
1/9
May 2002
STD25NF10
N-CHANNEL 100V - 0.033
- 25A DPAK
LOW GATE CHARGE STripFET
POWER MOSFET
(1) I
SD
≤
35A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
°
C, I
D
= 12.5A, V
DD
= 50V
I
TYPICAL R
DS
(on) = 0.033
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET processhas specifical-
ly beendesigned to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application.It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
(
G
) Pulse width limited by safe operating area
(*) Current Limited by Package
TYPE
V
DSS
R
DS(on)
I
D
STD25NF10
100 V
< 0.038
25 A
Parameter
Value
100
Unit
V
V
DGR
100
V
V
GS
Gate- source Voltage
±
20
V
I
D
(*)
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
25
A
I
D
21
A
I
DM
(
l
)
P
TOT
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
100
A
100
W
0.67
W/
°
C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
13
E
AS
(2)
T
stg
T
j
Single Pulse Avalanche Energy
480
mJ
Storage Temperature
–55 to 175
°
C
Operating Junction Temperature
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD25NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK |
| STD25NF10L | 制造商:STMicroelectronics 功能描述: |
| STD25NF10LA | 功能描述:MOSFET 100 V Mosfet 35 RDS 25A D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD25NF10LT4 | 功能描述:MOSFET N-Ch 100 Volt 25 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD25NF10LT4 | 制造商:STMicroelectronics 功能描述:MOSFET N REEL 2500 |
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