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參數(shù)資料
| 型號(hào)： | STD1NB60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET |
| 中文描述： | ? - 600V的通道- 7.4ohm - 1A條-像是iPak / MOSFET的DPAK封裝PowerMESH |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | STD1NB60 |
STD1NB60
N - CHANNEL 600V - 7.4
- 1A - IPAK/DPAK
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 7.4
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
November 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
600
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
600
V
±
30
1
V
A
0.63
A
4
A
45
W
Derating Factor
0.36
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
3.5
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤1 Α,
di/dt a 200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
150
TYPE
V
DSS
600 V
R
DS(on)
< 8.5
I
D
1 A
STD1NB60
3
2
1
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/6
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相關(guān)代理商/技術(shù)參數(shù) |
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| STD1NB60-1 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB60T4 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET |
| STD1NB80- | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET |
| STD1NB80-1 | 制造商:STMicroelectronics 功能描述:MOSFET N I-PAK |
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