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參數(shù)資料
| 型號： | STD1NB80-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 800V-16Ω-1A- IPAK PowerMESH MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道800V的-16Ω- 1A型，像是iPak PowerMESH MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | STD1NB80-1 |
STD1NB80-1
N - CHANNEL 800V - 16
- 1A - IPAK
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 16
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
September 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
800
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
800
±
30
1
V
V
A
0.63
A
4
A
50
W
Derating Factor
0.4
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤ 1Α,
di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
150
TYPE
V
DSS
800 V
R
DS(on)
< 20
I
D
1 A
STD1NB80-1
3
2
1
IPAK
TO-251
(Suffix "-1")
1/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD1NC40-1 | N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET |
| STD1NC60 | N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET |
| STD1NC70Z | N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STD1NC70Z-1 | Brilliance Bundled Coaxial Cable, Banana Peel; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STP2NC70Z | N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD1NB80-1 | 制造商:STMicroelectronics 功能描述:MOSFET N I-PAK |
| STD1NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 1.0 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NC40-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET |
| STD1NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET |
| STD1NC60T4 | 制造商:STMicroelectronics 功能描述: |
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