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參數(shù)資料
| 型號： | STD1NC40-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET |
| 中文描述： | ? -頻道400V - 8歐- 1A條-像是iPak PowerMESH二MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | STD1NC40-1 |
STD1NC40-1
N - CHANNEL 400V - 8
- 1A - IPAK
PowerMESH
ΙΙ
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 8
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using
the
latest
high
OVERLAY
ΙΙ
process, STMicroelectronics has
designed an advanced family of power MOSFETs
with outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
voltage
MESH
APPLICATIONS
I
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
I
CFL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
400
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
400
V
±
30
1
V
A
0.63
A
4
A
25
W
Derating Factor
0.2
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
3
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
1A, di/dt
≤
100 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
150
TYPE
V
DSS
400 V
R
DS(on)
< 10
I
D
1 A
STD1NC40-1
3
2
1
IPAK
TO-251
(Suffix "-1")
1/5
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PDF描述 |
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| STD1NC60 | N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET |
| STD1NC70Z | N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STD1NC70Z-1 | Brilliance Bundled Coaxial Cable, Banana Peel; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STP2NC70Z | N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD1NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET |
| STD1NC60T4 | 制造商:STMicroelectronics 功能描述: |
| STD1NC70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STD1NC70Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STD1NC70ZT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 1.4A I(D) | TO-252AA |
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