
OVERVIEW
COMPILED MEMORY
STD150
5-2
Samsung ASIC
— HCVROM
*
: High-Capacity Synchronous Via-1 Programmable ROM
The second string
,
‘a(chǎn)ppl_code
’
, means the specific application to suitably support the compiled memory and
the application code is one of High-Speed (
HS
)
,
High-Density (
HD
) and Low-Power (
LP
).
The third string,
‘proc_code’
, represents the process and the process code is one of High-speed process
(
H
), Generic process (
G
), and Low-Power process (
L
). If there is no process code, it means that the memory
is developed under Generic process. If the process code is set to ‘
L
’, it means that the memory is developed
under Low-Power process.
The fourth string,
‘opt_code’
, represents the number of read and write ports for multi-port memory and the
option code is composed of the following convention:
‘opt_code’ = <n>r<m>w
Currently this field is only used for SRFRAM, where n is the total number of read ports and m is the total
number of write ports.
The last string,
‘config_code’
, represents the configuration of the memory to be specified. This configuration
code is composed of the following convention:
‘config_code’ = <WORD> x <BPW> m <YMUX> b <BANK>
Where, WORD is the word depth, BPW is bit per word, YMUX is the available column mux type and BANK
is the number of bank to be used.
For example,
‘
spsram_hd_1024x32m16
’
refers to a High-Density single-port synchronous SRAM with 1024
words, 32 bits and 16 column mux under Generic process. Second,
‘s
rfram_hd_1r1w_32x32m2
’
refers to a
High-Density two-port (1-read/1-write) synchronous register file with 32 word, 32 bits and 2 column mux,
under Generic process.
‘
spsram_lp_1024x32m16
’
refers to a Low-Power single-port synchronous SRAM
with 1024 words, 32 bits and 16 column mux, under Generic process.