參數(shù)資料
型號: STD110NH02L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET⑩ III POWER MOSFET
中文描述: N溝道24V的- 0.0044歐姆- 80A條的DPAK STripFET⑩三功率MOSFET
文件頁數(shù): 9/11頁
文件大?。?/td> 498K
代理商: STD110NH02L
9/11
STD110NH02L
SW1
SW2
APPENDIX A
Buck Converter: Power Losses Estimation
The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is rmoved to allow for a safer working junction
temperature.
The low side (
SW2
) device requires:
Very low R
DS(on)
to reduce conduction losses
Small Q
gls
to reduce the gate charge losses
Small C
oss
to reduce losses due to output capacitance
Small Q
rr
to reduce losses on SW
1
during its turn-on
The C
gd
/C
gs
ratio lower than V
th
/V
gg
ratio especially with low drain to source
voltage to avoid the cross conduction phenomenon;
The high side (
SW1)
device requires:
Small R
g
and L
s
to allow higher gate current peak an to limit the voltage
feedback on the gate
Small Q
g
to have a faster commutation and to reduce gate charge losses
Low R
DS(on)
to reduce the conduction losses.
相關(guān)PDF資料
PDF描述
STD12N06L N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N溝道增強(qiáng)模式低閾值功率MOSFET)
STD12NE06L N-Channel 60V-0.09Ω-12A- DPAK SINGLE FEATURE SIZETM Power MOSFET(N溝道功率MOSFET)
STD15N06L N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N溝道增強(qiáng)模式低閾值功率MOSFET)
STD16NE06L-1 N-Channel 60V-0.07Ω-16A- TO-251 STripFETTM Power MOSFET(N溝道功率MOSFET)
STD16NE06L N-Channel 60V-0.07Ω-16A- DPAK STripFETTM " Power MOSFET(N溝道功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD110NH02L_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET
STD110NH02LT4 功能描述:MOSFET N-Ch 24 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD111 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STD111|Data Sheet
STD116 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述:Thyristor-Diode Modules, Diode-Thyristor Modules
STD116GK08 制造商:SIRECT 制造商全稱:Sirectifier Global Corp. 功能描述:Thyristor-Diode Modules, Diode-Thyristor Modules