參數(shù)資料
型號(hào): STC08IE120HV
廠商: 意法半導(dǎo)體
英文描述: Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
中文描述: 發(fā)射極開關(guān)雙極晶體管內(nèi)酰胺酶1200五- 8A條- 0.10歐姆
文件頁數(shù): 1/11頁
文件大小: 255K
代理商: STC08IE120HV
January 2007
Rev 3
1/11
11
Order codes
Part Number
Marking
Package
Packaging
STC08IE120HV
C08IE120HV
TO247-4L HV
Tube
STC08IE120HV
Emitter Switched Bipolar Transistor
ESBT
1200 V - 8 A - 0.10
General features
High voltage / high current Cascode
configuration
Low equivalent on resistance
very fast-switch up to 150 kHz
Squared RBSOA up to 1200V
Very low C
iss
driven by R
G
= 47
Very low turn-off cross over time
Applications
Flyback / forward SMPS
Sepic PFC
Description
The STC08IE120HV is manufactured in Monolith-
ic ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage
applications.
It is designed for use in Gate Driven based topolo-
gies.
Internal schematic diagrams
V
CS(ON)
I
C
R
CS(ON)
0.8 V
8 A
0.10
W
TO247-4L HV
1
234
www.st.com
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