參數(shù)資料
型號： STC5NF30V
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 30V - 0.027 OHM - 5A TSSOP8 2.7V-DRIVE STripFET II POWER MOSFET
中文描述： N溝道30V的- 0.027歐姆- 5A條采用TSSOP8為2.7V，驅(qū)動功率MOSFET第二STripFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 271K
代理商： STC5NF30V
1/8
June 2003
.
STC5NF30V
N-CHANNEL 30V - 0.027
- 5A TSSOP8
2.7V-DRIVE STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.027
@ 4.5 V
I
TYPICAL R
DS
(on) = 0.031
@ 2.7 V
I
ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
DC MOTOR DRIVE
I
DC-DC CONVERTERS
I
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
I
POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
TYPE
V
DSS
R
DS(on)
I
D
STC5NF30V
30 V
< 0.031
( @ 4.5 V )
< 0.035
( @ 2.7 V )
5 A
TSSOP8
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
(
)
Pulse width limited by safe operating area.
Parameter
Value
30
20
± 12
5
3
20
1.5
Unit
V
V
V
A
A
A
W
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STC5NF30V_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.027ヘ - 5A - TSSOP8 2.7V-drive STripFET⑩ II Power MOSFET
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