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參數(shù)資料
| 型號： | STC12IE90HV |
| 廠商： | 意法半導體 |
| 英文描述： | Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm |
| 中文描述： | 發(fā)射極開關(guān)雙極晶體管內(nèi)酰胺酶900五-第12A - 0.083歐姆 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 229K |
| 代理商： | STC12IE90HV |
Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
January 2007
Rev 1
1/11
11
Order codes
Part Number
Marking
Package
Packaging
STC12IE90HV
C12IE90HV
TO247-4L HV
Tube
STC12IE90HV
Emitter Switched Bipolar Transistor
ESBT
900 V - 12 A - 0.083
General features
■
High voltage / high current Cascode
configuration
■
Low equivalent on resistance
■
Very fast-switch up to 150 kHz
■
Squared RBSOA up to 900V
■
Very low C
iss
driven by R
G
= 47
■
Very low turn-off cross over time
Applications
■
Aux Smps For Three Phase Mains
Description
The STC12IE90HV is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
Internal schematic diagrams
V
CS(ON)
I
C
R
CS(ON)
1V
12A
0.083
W
1
234
TO247-4L HV
www.st.com
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