參數(shù)資料
型號(hào): STC05IE150HP
廠商: 意法半導(dǎo)體
英文描述: Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM
中文描述: 發(fā)射極開關(guān)雙極晶體管內(nèi)酰胺酶1500伏特- 5阿- 0.12OHM
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 147K
代理商: STC05IE150HP
November 2006
1/7
7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Features
High voltage / high current Cascode
configuration
Low equivalent on resistance
Very fast-switch, up to 150 kHZ
Squared rbsoa, up to 1500 V
Very low C
ISS
driven by R
G
= 47
Very low turn-off cross over time
In compliance with the 2002/93/EC European
Directive
Applications
Aux SMPS for three phase mains
Sepic PFC
Description
The
Monolithic ESBT Technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in Gate Driven
based topologies.
STC05IE150HP
is
manufactured
in
PRELIMINARY DATA
Internal Schematic Diagram
V
CS(ON)
I
C
R
CS(ON)
0.6 V
5 A
0.12
W
TO247-4LHP
STC05IE150HP
Emitter Switched Bipolar Transistor
ESBT
1500 V - 5 A - 0.12
www.st.com
Order Codes
Part Number
Marking
Package
Packaging
STC05IE150HP
C05IE150HP
TO247-4LHP
TUBE
Rev 2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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STC08DE150HP 功能描述:兩極晶體管 - BJT Hybrid emitter transistor ESBT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2