參數(shù)資料
型號： STB75NH02LT4
廠商： 意法半導(dǎo)體
英文描述： N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
中文描述： N溝道24V的- 0.0062ohm -第60A條-采用D2PAK STripFET商標(biāo)第三功率MOSFET
文件頁數(shù)： 4/13頁
文件大?。?/td> 398K
代理商： STB75NH02LT4
Electrical characteristics
STB75NH02L
4/13
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 3.
On/off states
Table 4.
Dynamic
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 25 mA, V
GS
= 0
24
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 20 V,
V
DS
= 20 V,Tc = 125°C
1
10
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.8
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 30 A
V
GS
= 5 V, I
D
= 30 A
0.0062
0.008
0.008
0.014
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward Transconductance
V
DS
=10V, I
D
= 18A
27
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, f=1 MHz, V
GS
=0
2050
545
70
pF
pF
pF
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=10V, I
D
= 60 A
V
GS
=5V
Figure 14
17
7.7
3.5
22
nC
nC
nC
R
G
Gate Input Resistance
f=1MHz Gate DC Bias =0
Test Signal Level =20mV
Open Drain
1.1
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
rise time
V
DD
=10 V, I
D
=30 A,
R
G
=4.7
,
V
GS
=10V
Figure 15
12
200
ns
ns
t
d(off)
t
f
Turn-off delay time
fall time
V
DD
=10 V, I
D
=30A,
R
G
=4.7
,
V
GS
=10V
Figure 15
18
25
ns
ns
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