參數(shù)資料
型號： STB75NH02LT4
廠商： 意法半導(dǎo)體
英文描述： N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
中文描述： N溝道24V的- 0.0062ohm -第60A條-采用D2PAK STripFET商標(biāo)第三功率MOSFET
文件頁數(shù)： 3/13頁
文件大?。?/td> 398K
代理商： STB75NH02LT4
STB75NH02L
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
V
spike (1)
1.
Garanted when external Rg = 4.7
and t
f
< t
fmax
Value limited by wire bonding
Drain-source voltage rating
30
V
V
DS
Drain-source voltage (V
GS
= 0)
24
V
V
GS
Gate-source voltage
± 20
V
I
D (2)
2.
Drain current (continuous) at T
C
= 25°C
60
A
I
D
Drain current (continuous) at T
C
= 100°C
53
A
I
DM (3)
3.
Pulse width limited by safe operating area
Drain current (pulsed)
240
A
P
TOT (4)
4.
This value is rated according to R
thJC
Starting T
J
=25°C, Id = 30A, Vdd = 15V
Total dissipation at T
C
= 25°C
80
W
Derating factor
0.53
W/°C
E
AS
(5)
5.
Single pulse avalanche energy
360
mJ
T
J
T
stg
Operating junction temperature
storage temperature
-55 to 175
°C
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case max
1.88
°C/W
R
thJA
Thermal resistance junction-amb max
62.5
°C/W
T
l
Maximum lead temperature for soldering
purpose
300
°C
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