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參數(shù)資料
| 型號： | STB40NF10L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道100V的- 0.028ohm - 40A條采用D2PAK低柵極電荷STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 435K |
| 代理商： | STB40NF10L |
1/9
April 2001
STB40NF10L
N-CHANNEL 100V - 0.028
- 40A D2PAK
LOW GATE CHARGE STripFET POWER MOSFET
(1) Starting T
j
= 25
°C, I
D
= 20A, V
DD
= 40V
I
TYPICAL R
DS
(on) = 0.028
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
I
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB40NF10L
100 V
< 0.033
40 A
Parameter
Value
Unit
100
V
100
V
± 15
V
40
A
25
A
160
A
150
W
1
W/°C
430
mJ
–65 to 175
°C
175
°C
D2PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB40NF10LT4 | 功能描述:MOSFET N-Ch 100 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB40NF10T4 | 功能描述:MOSFET N-Ch 100 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB40NF20 | 功能描述:MOSFET Low charge STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB40NS15 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 150V - 0.042ohm - 40A D2PAK MESH OVERLAY⑩ MOSFET |
| STB40NS15T4 | 功能描述:MOSFET N-Ch 150 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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