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參數(shù)資料
| 型號： | STB3NA80T4 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 3.1AI（四）|對263AB |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 127K |
| 代理商： | STB3NA80T4 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 640 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 640 V
I
D
= 1.5 A
V
GS
= 10 V
25
55
35
75
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 3 A
V
GS
= 10 V
180
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 3 A
V
GS
= 10 V
35
6
15
50
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 3 A
V
GS
= 10 V
50
15
75
70
25
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
3.1
12.5
A
A
V
SD
(
)
I
SD
= 3.1 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.1 A
V
DD
= 100 V
(see test circuit, figure 5)
700
9.5
27
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimitedby safe operating area
Safe Operating Area
ThermalImpedance
STB3NA80
3/10
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