參數(shù)資料
型號： STB30NE06L
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET
中文描述： ? -通道60V的- 0.35ohm - 30A條-采用D2PAK STripFET]功率MOSFET
文件頁數(shù)： 1/6頁
文件大?。?/td> 47K
代理商： STB30NE06L
STB30NE06L
N - CHANNEL 60V - 0.35
- 30A - D
2
PAK
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.035
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
APPLICATIONORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size
”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturingreproducibility.
APPLICATIONS
I
DC MOTORCONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
March 1999
1
3
D
2
PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
60
V
±
20
30
V
A
I
D
21
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
120
A
80
W
0.53
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
TYPE
V
DSS
R
DS(on)
< 0.05
I
D
STB30NE06L
60 V
30 A
1/6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB30NE06LT4 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB30NF10 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 100V 35A D2PAK
STB30NF10_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.038ヘ - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET⑩ II Power MOSFET
STB30NF10T4 功能描述:MOSFET N-Ch 100 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB30NF20 功能描述:MOSFET N Ch 1500V 2.5A Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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