- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380760 > STB24NF10T4 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 26A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | STB24NF10T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 26A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第26A條（?。﹟對(duì)263AB |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | STB24NF10T4 |
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia- Brazil -China - Finland - France- Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
STB24NF10
6/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB25NM60N | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STB25NM60N-1 | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STF25NM60N | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STP25NM60N | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STW25NM60N | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB24NM60N | 功能描述:MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB24NM65N | 功能描述:MOSFET N-Channel 650V 0.16 Ohms 19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB25N80K5 | 功能描述:MOSFET N-Ch 800V 0.19 Ohm 19.5A SuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB25NF06LAG | 功能描述:MOSFET N-CHANNEL 60V 25A D2PAK 制造商:stmicroelectronics 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:25A 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:- 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:14nC @ 10V Vgs（最大值）:- FET 功能:- 功率耗散（最大值）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:- 工作溫度:- 安裝類型:表面貼裝 供應(yīng)商器件封裝:D2PAK 封裝/外殼:TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 標(biāo)準(zhǔn)包裝:1 |
| STB25NM50N | 功能描述:MOSFET N Ch 550V TJMAX 0.12 Ohm 21.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。