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參數(shù)資料
| 型號： | STB210NF02 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 20V - 0.0026 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道20V的- 0.0026歐姆- 120A條?巴基斯坦/我PAK/TO-220 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 609K |
| 代理商： | STB210NF02 |
STB210NF02/-1 STP210NF02
14/14
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP210NF02 | N-CHANNEL 20V - 0.0026 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET |
| STB210NF02-1 | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:470uF; Capacitance Tolerance:+/- 20%; ESR:55mohm; Operating Temp. Max:125 C RoHS Compliant: Yes |
| STB24NF10 | N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET |
| STB24NF10T4 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 26A I(D) | TO-263AB |
| STB25NM60N | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB210NF02-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 20V - 0.0026 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET |
| STB210NF02T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 120A I(D) | TO-263AB |
| STB21N65M5 | 功能描述:MOSFET POWER MOSFET N-CH 650V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB21N90K5 | 功能描述:MOSFET N-Ch 900V 0.25 Ohm 18.5A SuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB21NK50Z | 功能描述:MOSFET N-ch 500 Volt 17Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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