參數(shù)資料
型號： STB20NK50Z-S
廠商： 意法半導(dǎo)體
英文描述： Thick Film Resistor Network; Series:RNA4A; Resistance:47kohm; Resistance Tolerance:+/- 5 %; Power Rating:0.063W; Voltage Rating:25V; Temperature Coefficient:+/-250 ppm; Package/Case:10-SOIC; Network Circuit Type:Dual Termination
中文描述： N溝道500V -0.23歐姆- 17A條TO-220/D2PAK/I2SPAK/TO-247
文件頁數(shù)： 2/13頁
文件大?。?/td> 383K
代理商： STB20NK50Z-S
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
V
ESD(G-S)
Gate source ESD(HBM-C=100 pF, R=1.5 K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
17A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
500
V
500
V
± 30
V
17
A
10.71
A
68
A
190
W
1.51
W/
°
C
6000
V
4.5
V/ns
Operating Junction Temperature
-55 to 150
°
C
TO-220/D2PAK
TO-247
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.66
°
C/W
°
C/W
°
C
62.5
50
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
17
Unit
A
850
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB20NK50ZT4 功能描述:MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB20NM50 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500V - 0.20ヘ - 20A - TO220/FP-D2PAK-I2PAK MDmesh⑩ Power MOSFET
STB20NM50_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500V - 0.20ヘ - 20A - TO220/FP-D2PAK-I2PAK MDmesh⑩ Power MOSFET
STB20NM50-1 功能描述:MOSFET N-Ch 500 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB20NM50FD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.22W - 20A TO-220/TO-220FP/D2PAK FDmesh⑩ Power MOSFET (with FAST DIODE)
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