參數(shù)資料
型號(hào): STB19NF20
廠商: 意法半導(dǎo)體
英文描述: N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET
中文描述: N溝道200伏- 0.15ヘ- 15A條-到220 -采用D2PAK -對(duì)220FP網(wǎng)眼密胺⑩功率MOSFET
文件頁數(shù): 5/16頁
文件大?。?/td> 525K
代理商: STB19NF20
STB19NF20 - STF9NF20 - STP19NF20
Electrical characteristics
5/16
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=100 V, I
D
= 7.5A,
R
G
=4.7
,
V
GS
=10V
(see Figure 15)
11.5
22
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 100 V, I
D
= 7.5A,
R
G
= 4.7
,
V
GS
= 10V
(see Figure 15)
19
11
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
I
SD
Source-drain current
15
A
I
SDM(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
60
A
V
SD(2)
2.
Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward on voltage
I
SD
=15A, V
GS
=0
1.6
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=15A, V
DD
=50V
di/dt = 100A/μs,
(see Figure 20)
125
0.55
8.8
ns
μC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=15A, V
DD
=50V
di/dt = 100A/μs,
Tj=150°C
(see Figure 20)
148
0.73
9.9
ns
μC
A
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STP19NF20 N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET
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