- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380760 > STB16PF06LT4 (意法半導體) P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET PDF資料下載
參數(shù)資料
| 型號： | STB16PF06LT4 |
| 廠商： | 意法半導體 |
| 英文描述： | P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET |
| 中文描述： | P通道60V的- 0.11Ω的- 16A條采用D2PAK STripFET MOSFET的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 301K |
| 代理商： | STB16PF06LT4 |
STB16PF06L
2/10
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate-source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
16A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
°
C , I
D
= 8 A , V
DD
= 30 V
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse
Table 4: Thermal Data
Rthj-case
Rthj-PCB(#)
T
l
(#) When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100μA
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5V, I
D
= 8 A
Parameter
Value
Unit
60
V
60
V
± 16
V
16
A
11.4
A
64
A
70
W
0.4
20
W/
°
C
V/ns
250
mJ
Operating Junction Temperature
- 55 to 175
°
C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-PCB Max
Maximum Lead Temperature For Soldering
Purpose (1.6 mm frrom case, for 10sec)
2.14
34
300
°
C/W
°
C/W
°
C
Test Conditions
I
D
= 250μA, V
GS
= 0
Min.
60
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 16V
±100
nA
1.5
V
V
GS
= 10V, I
D
= 8 A
0.11
0.130
0.125
0.165
相關PDF資料 |
PDF描述 |
|---|---|
| STB18N20 | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強模式功率MOS晶體管) |
| STB190NF04-1 | N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET |
| STB190NF04T4 | N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET |
| STB19NF20 | N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET |
| STP19NF20 | N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB170NF04 | 功能描述:MOSFET N-CH 40V STripFET 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB180N10F3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100 V, 4.0 mΩ, 120 A STripFET? Power MOSFET D2PAK, TO-220 |
| STB180N55 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET |
| STB180N55F3 | 功能描述:MOSFET Lo Vltg fast Swtch PNP Pwr transistor RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB185N10F3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100 V, 4.0 mΩ, 120 A, D2PAK, TO-220 STripFET? Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。