參數(shù)資料
型號(hào): STB100NH02L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 24V - 0.0052ohm - 60A DPAK STripFET⑩ III POWER MOSFET
中文描述: N溝道24V的- 0.0052ohm -第60A條?巴基斯坦STripFET⑩三功率MOSFET
文件頁數(shù): 11/11頁
文件大小: 405K
代理商: STB100NH02L
11/11
STB100NH02L
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB100NH02LT4 功能描述:MOSFET N-Ch 24 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB101-0.421-34 制造商:Lyn-Tron Inc 功能描述:
STB101-0.473-31 制造商:Lyn-Tron Inc 功能描述:
STB101-0.525-31 制造商:Lyn-Tron Inc 功能描述:
STB10100CTR 功能描述:DIODE ARRAY SCHOTTKY 100V D2PAK 制造商:smc diode solutions 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 二極管配置:1 對(duì)共陰極 二極管類型:肖特基 電壓 - DC 反向(Vr)(最大值):100V 電流 - 平均整流(Io)(每二極管):- 不同 If 時(shí)的電壓 - 正向(Vf):750mV @ 5A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):- 不同?Vr 時(shí)的電流 - 反向漏電流:120μA @ 100V 安裝類型:表面貼裝 封裝/外殼:TO-263-3,D2Pak(2 引線+接片),TO-263AB 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1