參數(shù)資料
型號: START620
廠商: 意法半導(dǎo)體
英文描述: NPN SiGe RF Transistor
中文描述: npn型硅鍺射頻晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 33K
代理商: START620
1/5
PRELIMINARY DATA
May, 3 2002
START620
NPN SiGe RF Transistor
SOT343 (SC70)
ORDER CODE
START620TR
BRANDING
620
APPLICATIONS
LNA FOR GSM/DCS, CDMA, WCDMA,
BLUETOOTH
GENERAL PURPOSE 500MHz-5GHz
LOW NOISE FIGURE: NFmin = 0.8dB
@ 1.8GHz, 5mA, 2V
COMPRESSION P1dB = 13dBm
@ 1.8GHz, 20mA, 2V
ULTRA MINIATURE SOT343 PACKAGE
DESCRIPTION
The START620 is a member of the START family
that provide market with the state of the art of RF
silicon process. It uses ST’s Silicon Germanium
technology. This technology offers ft’s of up to
45GHz and Fmax’s of over 60GHz. The START620
offers the best mix of gain and NF for given
breakdown voltage(BVceo = 3.3V).
It reaches performance level only achieved with
GaAs products before.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
ceo
Collector emitter voltage
V
cbo
Collector base voltage
V
ebo
Emitter base voltage
I
c
Collector current
I
b
Base current
P
tot
Total dissipation, T
s
=
101
T
stg
Storage temperature
Parameter
Value
3.3
10
1.5
40
4
135
Unit
V
V
V
mA
mA
mW
-65 to 150
o
C
T
j
Max. operating junction temperature
150
o
C
R
thjs
Thermal Resistance Junction soldering point
270
o
C/W
ABSOLUTE MAXIMUM RATINGS
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