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參數(shù)資料
| 型號(hào)： | SSTD89A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET with Built-In Self-Biased Diodes |
| 中文描述： | N溝道場(chǎng)效應(yīng)，配有自偏置二極管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | SSTD89A |
SSTD89A
Vishay Siliconix
New Product
www.siliconix.com FaxBack 408-970-5600
2
Document Number: 71092
S-02336
—
Rev. B, 23-Oct-00
Parameter
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
V
GS
= 0 V, I
G
= 1 A
–
15
–
21
Gate-Source Cut-Off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 100 nA
–
0.3
–
1.2
V
Saturation Current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
1.1
mA
Operating Current
I
D(op)
See Figure 1
10
50
A
Gate-Reverse Current
I
GSS
V
GS
= 10 V, V
DS
= 0 V
5
100
Drain Cut-Off Current
b
I
D(off)
V
DS
= 15 V, V
GS
=
–
5 V
2
pA
Diode Forward Transconductance
V
F
I
F
= 1 mA
0.5
0.7
Gate-Source Forward Voltage
V
GS(F)
V
DS
= 0 V, I
G
= 1 mA
0.7
V
Dynamic
Common-Source Forward
Transconductance
gfs
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
0.7
1.5
mS
Common-Source Input Capacitance
C
iss
3.8
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
2.1
pF
Equivalent Input Noise Voltage
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
5
NV/s
qrt (Hz)
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
2%.
G
Internal
Diode
22 k
V
GS(op)
S
D
SSTD89A
Figure 1.
1.2 V
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| SST-DN3-104-1 | 制造商:MOLEX 制造商全稱(chēng):Molex Electronics Ltd. 功能描述:DeviceNet card, PC/104, 1 channel |
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