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參數(shù)資料
| 型號： | SUB15P01-52 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 8-V (D-S), 175C MOSFET |
| 中文描述： | P通道8 - V（下局副局長），175C MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SUB15P01-52 |
SUP/SUB15P01-52
Vishay Siliconix
Document Number: 71085
S-20966—Rev. C, 01-Jul-02
www.vishay.com
1
P-Channel 8-V (D-S), 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.052 @ V
GS
= –4.5 V
–15
–8
0.070 @ V
GS
= –2.5 V
0.105 @ V
GS
= –1.8 V
–10
–10.5
SUP15P01-52
SUB15P01-52
DRAIN connected to TAB
S
G
D
P-Channel MOSFET
TO-220AB
Top View
G D S
TO-263
S
G
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
GS
–8
Gate-Source Voltage
8
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
T
C
= 125 C
–15
I
D
–8.7
Pulsed Drain Current
I
DM
I
AR
E
AR
–25
A
Avalanche Current
–10
Repetitive Avalanche Energy
b
L = 0.1 mH
5
mJ
T
C
= 25 C (TO-220AB and TO-263)
T
A
= 25 C (TO-263)
c
25
d
Power Dissipation
P
D
2.1
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient
PCB Mount (TO-263)
c
R
thJA
58
70
Junction-to-Case
R
thJC
5
6
C/W
Junction-to-Lead
R
thJL
16
20
Notes:
a.
b.
c.
d.
Package limited.
Duty cycle
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
1%.
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