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參數(shù)資料
| 型號(hào)： | SSTD89A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET with Built-In Self-Biased Diodes |
| 中文描述： | N溝道場效應(yīng)，配有自偏置二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | SSTD89A |
SSTD89A
Vishay Siliconix
New Product
Document Number: 71092
S-02336—Rev. B, 23-Oct-00
www.vishay.com
1
N-Channel JFET with Built-In Self-Biased Diodes
V
GS(off)
(V)
V
(BR)DSS
Min (V)
g
fs Min (mS)
I
DSS
Max (mA)
–0.3 to –1.2
–15
1
1.1
High Gain
Built-In Diodes
V
GS(off)
Max –1.2 V
Full Performance from Low Voltage
Power Supply: As Low As 1.2 V
Low Signal Loss/System Error
High Quality, Low Level Signal
Amplification
Hearing Aids, Mini Microphones
High-Gain/Low-Noise Amplifiers
Low-Current/Low-Voltage Battery Powered Amplifiers
Infrared Detector Amplifiers
Ultra-High Input Impedance Pre-Amplifiers
The SSTD89A n-channel JFET features built-in self-biased
diodes and is designed to provide low voltage, low noise
and low cut-off voltage. It can be used with power supplies
as low as 1.2 V. The SSTD89A is ideal for use in low
current amplifier, hearing aid and mini-microphone
applications.
The SSTD89A is available in the SC-70 (SOT-353), 5-lead
package.
SOT-353
SC-70 (5-LEADS)
Top View
Order Number: SSTD89A
3
1
4
5
2
D
S
G
Diode
Gate-Drain
–15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage
–15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–55 to 150 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature
Power Dissipation
a
SOT-353
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Device mounted with all leads soldered or welded to PC board.
–55 to 150 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250 mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSTD89A-T1 | 功能描述:JFET 15V 1.1mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST-DN3-104-1 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:DeviceNet card, PC/104, 1 channel |
| SST-DN3-104-1E | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:DeviceNet card, PC/104, 1 channel |
| SST-DN3-104-2 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:DeviceNet card, PC/104, 2 channels |
| SST-DN3-CNF-U | 制造商:Woodhead Molex 功能描述: |
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