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參數(shù)資料
| 型號： | SST39WF1602-90-4I-B3KE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 1M X 16 FLASH 1.8V PROM, 90 ns, PBGA48 |
| 封裝： | 6 X 8 MM, ROHS COMPLIANT, MO-210AB-1, TFBGA-48 |
| 文件頁數(shù)： | 10/29頁 |
| 文件大?。?/td> | 636K |
| 代理商： | SST39WF1602-90-4I-B3KE |
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10
Preliminary Specifications
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
2006 Silicon Storage Technology, Inc.
S71297-01-000
7/06
TABLE
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
7: CFI Query Identification String
1
Data
Data
0051H
Query Unique ASCII string “QRY”
0052H
0059H
0002H
Primary OEM command set
0000H
0000H
Address for Primary Extended Table
0000H
0000H
Alternate OEM command set (00H = none exists)
0000H
0000H
Address for Alternate OEM extended Table (00H = none exits)
0000H
T7.0 1297
1. Refer to CFI publication 100 for more details.
TABLE
8: System Interface Information
Address
1BH
Data
0016H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
μs (2
5
= 32 μs)
Typical time out for min. size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
5
= 30 ms)
Typical time out for Chip-Erase 2
N
ms (2
7
= 128 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
5
= 64 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
5
= 64 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
7
= 256 ms)
1CH
0020H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0005H
0000H
0005H
0007H
0001H
0000H
0001H
0001H
T8.0 1297
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
9: Device Geometry Information
Data
Data
0015H
Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
0000H
0000H
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
0000H
0002H
Number of Erase Sector/Block sizes supported by device
00FFH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
0001H
y = 511 + 1 = 512 sectors (01FF = 511
0010H
0000H
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
001FH
Block Information (y + 1 = Number of blocks; z x 256B = block size)
0000H
y = 31 + 1 = 32 blocks (001F = 31)
0000H
0001H
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.0 1297
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39WF1602-90-4I-MBQE | 功能描述:閃存 1.65V to 1.95V 16mb Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-B3KE | 功能描述:閃存 4M (256Kx16) 90ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-B3KE-T | 功能描述:閃存 1.65 to 1.95V 4Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-C1QE | 功能描述:閃存 4M (256Kx16) 90ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-M1Q | 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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