參數(shù)資料
型號: SST37VF010-70-3I-NH
英文描述: SM IC/CY7C1019 128K X 8 SRAM
中文描述: x8閃存EEPROM的
文件頁數(shù): 2/16頁
文件大?。?/td> 165K
代理商: SST37VF010-70-3I-NH
2
Data Sheet
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
2001 Silicon Storage Technology, Inc.
S71151-02-000
5/01
397
Byte-Program Operation
The SST37VF512/010/020/040 are programmed by using
an external programmer. The programming mode is acti-
vated by asserting 12V (±5%) on OE# pin and V
IL
on CE#
pin. The device is programmed using a single pulse (WE#
pin low) of 10 μs per byte. Using the MTP programming
algorithm, the Byte-Program process continues byte-by-
byte until the entire chip has been programmed. Refer to
Figure 10 for the flowchart and Figure 6 for the timing dia-
gram.
Chip-Erase Operation
The only way to change a data from a
0
to
1
is by electri-
cal erase that changes every bit in the device to
1
. The
SST37VF512/010/020/040 use an electrical Chip-Erase
operation. The entire chip can be erased in 100 ms (WE#
pin low). In order to activate erase mode, the 12V (±5%) is
applied to OE# and A
9
pins while CE# is low. All other
address and data pins are
don
t care
. The falling edge of
WE# will start the Chip-Erase operation. Once the chip has
been erased, all bytes must be verified for FFH. Refer to Fig-
ure 9 for the flowchart and Figure 5 for the timing diagram.
Product Identification Mode
The Product Identification mode identifies the devices as
SST37VF512,
SST37VF010,
SST37VF040 and manufacturer as SST. This mode may
be accessed by the hardware method. To activate this
mode, the programming equipment must force V
H
(12V±5%) on address A
9
. Two identifier bytes may then be
sequenced from the device outputs by toggling address
line A
0
. For details, see Table 3 for hardware operation.
SST37VF020,
and
Design Considerations
The SST37VF512/010/020/040 should have a 0.1μF
ceramic high frequency, low inductance capacitor con-
nected between V
DD
and GND. This capacitor should be
placed as close to the package terminals as possible.
OE# and A
9
must remain stable at V
H
for the entire dura-
tion of an Erase operation. OE# must remain stable at V
H
for the entire duration of the Program operation.
TABLE
1: P
RODUCT
I
DENTIFICATION
Address
0000H
Data
BFH
Manufacturer
s ID
Device ID
SST37VF512
SST37VF010
SST37VF020
SST37VF040
0001H
0001H
0001H
0001H
C4H
C5H
C6H
C2H
T1.2 397
Y-Decoder
I/O Buffers
397 ILL B1.1
Address Buffer
X-Decoder
DQ7 - DQ0
Memory Address
A9
OE#
CE#
WE#
SuperFlash
Memory
Control Logic
F
UNCTIONAL
B
LOCK
D
IAGRAM
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SST37VF010-90-3C-NH 功能描述:閃存 U 804-37VF0107CNH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST37VF010-90-3C-PH 功能描述:閃存 128K X 8 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST37VF010-90-3C-WH 功能描述:閃存 U 804-37VF0107CWH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST37VF010-90-3I-NH 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM