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參數(shù)資料
| 型號： | SST34HF1601-70-4C-L1P |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | 組合存儲器 |
| 英文描述： | 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| 中文描述： | 16兆位的SuperFlash 8兆位并行SRAM的ComboMemory |
| 文件頁數(shù)： | 10/30頁 |
| 文件大?。?/td> | 472K |
| 代理商： | SST34HF1601-70-4C-L1P |
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10
Advance Specifications
16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
SST34HF1681
2001 Silicon Storage Technology, Inc.
S71214-00-000
12/01 561
TABLE
6: S
YSTEM
I
NTERFACE
I
NFORMATION
Address
1BH
Data
0027H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
Min (00H = no V
PP
pin)
V
PP
Max (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
μs (24 = 16 μs)
Typical time out for Min size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
6
= 64 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
4
= 32 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical
(2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
6
= 128 ms)
1CH
0036H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
26H
0001H
T6.0 561
TABLE
7: D
EVICE
G
EOMETRY
I
NFORMATION
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0015H
0001H
0000H
0000H
0000H
0002H
00FFH
0003H
0008H
0000H
001FH
0000H
0000H
0001H
Data
Device size = 2
N
Byte (15H = 21; 2
21
= 2M Bytes)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 1023 + 1 = 1024 sectors (03FF = 1023)
z = 8 x 256 Bytes = 2 KByte/sector (0008H = 8)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (001F = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.0 561
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| SST34HF1601-90-4C-L1P | 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| SST34HF1602D-70-4C-B1PE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602C | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602D-70-4C-B1SE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602D-70-4C-L1PE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST34HF1601-70-4C-LFP | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory |
| SST34HF1601-70-4E-L1P | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| SST34HF1601-70-4E-LFP | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory |
| SST34HF1601-90-4C-L1P | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory |
| SST34HF1601-90-4C-LFP | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory |
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