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參數(shù)資料
| 型號(hào)： | SST30VR043-70-C-WH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | SRAM |
| 英文描述： | 4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo |
| 中文描述： | 4兆位光盤1兆位/ 256千位的SRAM ROM / RAM內(nèi)存組合 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | SST30VR043-70-C-WH |
Data Sheet
2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM
ROM/RAM Combo
SST30VR021 / SST30VR022 / SST30VR023
7
2001 Silicon Storage Technology, Inc.
S71135-02-000
4/01
380
II. SRAM Operation
(ROMCS# = V
IH
)
TABLE
6: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 3.0V±0.3
Symbol
T
RC
T
AA
T
CO
T
OE
T
LZ
T
HZ
T
OHZ
T
OH
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
SST30VR022-70
Min
70
SST30VR021/023-500
Min
500
Units
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
70
70
35
500
500
250
0
25
25
25
30
30
10
15
T6.2 380
TABLE
7: W
RITE
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 3.0V±0.3
Symbol
T
WC
T
CW
T
AW
T
AS
T
WP
T
WR
T
WHZ
T
DW
T
DH
T
OW
Parameter
Write Cycle Time
Chip Select to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
SST30VR022-70
Min
70
60
60
0
60
0
SST30VR021/023-500
Min
500
365
375
0
375
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
30
80
30
0
0
200
0
15
T7.1 380
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| SST31LF021 | 2 Mbit Flash + 1 Mbit SRAM ComboMemory |
| SST31LF021-300-4C-WH | 2 Mbit Flash + 1 Mbit SRAM ComboMemory |
| SST31LF021-300-4E-WH | 2 Mbit Flash + 1 Mbit SRAM ComboMemory |
| SST31LF041A-70-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF043-70-4C-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST30VR043-70-E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST310 | 功能描述:JFET 35V 24mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST310 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N SOT-23 |
| SST310_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET |
| SST310-E3 | 功能描述:JFET 35V 24mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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