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參數(shù)資料
| 型號： | SST30VR043-70-C-WH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | SRAM |
| 英文描述： | 4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo |
| 中文描述： | 4兆位光盤1兆位/ 256千位的SRAM ROM / RAM內(nèi)存組合 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 111K |
| 代理商： | SST30VR043-70-C-WH |
6
Data Sheet
2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM
ROM/RAM Combo
SST30VR021 / SST30VR022 / SST30VR023
2001 Silicon Storage Technology, Inc.
S71135-02-000
4/01
380
FIGURE 5: ROM R
EAD
C
YCLE
T
IMING
D
IAGRAM
(ROMCS# & OE# C
ONTROLLED
)
TRC
TAA
TCO
TLZ(2)
TOHZ(1)
TOH
THZ(1,2)
Data Valid
380 ILL F03.0
Data Out
OE#
ROMCS#
High-Z
Address
TOE
TOLZ
Notes: 1. THZ and TOHZ are defined as the time at which the outputs achieve the open circuit condition
and are referenced to the VOH or VOL.
2. At any given temperature and voltage condition THZ(max) is less than TLZ(min) both for a given
device and from device to device.
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| SST31LF021 | 2 Mbit Flash + 1 Mbit SRAM ComboMemory |
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| SST31LF041A-70-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF043-70-4C-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST30VR043-70-E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST310 | 功能描述:JFET 35V 24mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST310 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N SOT-23 |
| SST310_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET |
| SST310-E3 | 功能描述:JFET 35V 24mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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