參數(shù)資料
型號(hào)： SST30VR021-500-E-WH
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： 存儲(chǔ)器
英文描述： 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo
中文描述： SPECIALTY MEMORY CIRCUIT, PDSO32
封裝： 8 X 14 MM, TSOP1-32
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 111K
代理商： SST30VR021-500-E-WH
Data Sheet
2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM
ROM/RAM Combo
SST30VR021 / SST30VR022 / SST30VR023
3
2001 Silicon Storage Technology, Inc.
S71135-02-000
4/01
380
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under
“
Absolute Maximum
Stress Ratings
”
may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20
°
C to +85
°
C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
°
C to +150
°
C
Voltage on Any Pin Relative to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to V
DD
+ 0.5V
Voltage on V
DD
Supply Relative to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 4.0V
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Soldering Temperature (10 Seconds Lead Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
°
C
O
PERATING
R
ANGE
Range
Commercial
Extended
Ambient Temp
0
°
C to +70
°
C
-20
°
C to +85
°
C
V
DD
2.7-3.3V
2.7-3.3V
AC C
ONDITIONS
OF
T
EST
Input Pulse Level
. . . . . . . . . . . . . . . . . . . . . . . .0-V
DD
Input & Output Timing Reference Levels
. . . . . . .V
DD
/2
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C
L
= 30 pF for 70 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C
L
= 100 pF for 500 ns
TABLE
2: R
ECOMMENDED
DC O
PERATING
C
ONDITIONS
Symbol
V
DD
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min
2.7
0
2.4
-0.3
Max
3.3
0
Units
V
V
V
V
V
DD
+ 0.5
0.3
T2.0 380
TABLE
3: DC O
PERATING
C
HARACTERISTICS
Symbol
I
DD1
Parameter
ROM Operating Supply Current
V
DD
= 3.0 ± 0.3V
Max
4.0+1.1(f)
1
Test Conditions
ROMCS#=V
IL
, RAMCS#=V
IH
,
V
IN
=V
IH
or V
IL,
I
I/O
=Opens
ROMCS#=V
IH
, RAMCS#=V
IL
, I
I/O
=Opens
ROMCS#
≥
V
DD
-0.2V, RAMCS#
≥
V
DD
-0.2V
V
IN
≥
V
DD
-0.2V or V
IN
≤
0.2V
V
IN
=V
SS
to V
DD
ROMCS#=RAMCS#=V
IH
or OE#=V
IH
or
WE#=V
IL
, V
I/O
=V
SS
to V
DD
I
OL
= 1.0 mA
I
OH
= -0.5 mA
Min
Units
mA
1. f = Frequency of operation (MHz) = 1/cycle time
I
DD2
I
SB
RAM Operating Supply Current
Standby V
DD
Current
2.5+1(f)
1
10
mA
μA
I
LI
I
LO
Input Leakage Current
Output Leakage Current
-1
-1
1
1
μA
μA
V
OL
V
OH
Output Low Voltage
Output High Voltage
0.4
V
V
2.2
T3.3 380
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST30VR021-500-I-KH 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/ROM
SST30VR021-500-I-WH 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/ROM
SST30VR021-70-C-WH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo
SST30VR021-70-E-WH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo
SST30VR022 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo
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