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參數(shù)資料
| 型號： | SST30VR043-70-E-WH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | SRAM |
| 英文描述： | 4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo |
| 中文描述： | 4兆位光盤1兆位/ 256千位的SRAM ROM / RAM內(nèi)存組合 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 111K |
| 代理商： | SST30VR043-70-E-WH |
2001 Silicon Storage Technology, Inc.
S71135-02-000
4/01
1
380
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
ComboMemory is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
ROM + SRAM ROM/RAM Combo
– SST30VR021: 256K x8 ROM + 128K x8 SRAM
– SST30VR022: 256K x8 ROM + 256K x8 SRAM
– SST30VR023: 256K x8 ROM + 32K x8 SRAM
ROM/RAM combo on a monolithic chip
Equivalent ComboMemory (Flash + SRAM):
SST31LF021E for code development and
pre-production
Wide Operating Voltage Range: 2.7-3.3V
Chip Access Time
–
SST30VR022
70 ns
–
SST30VR021/023 500 ns
Low Power Dissipation:
–
Standby: 3 μW (Typical)
–
Operating: 10 mW (Typical)
Fully Static Operation
–
No clock or refresh required
Three state Outputs
Packages Available
–
32-pin TSOP (8mm x14mm)
PRODUCT DESCRIPTION
The SST30VR021/022/023 are ROM/RAM combo chips
consisting of 2 Mbit Read Only Memory organized as 256
KBytes and Static Random Access Memory organized as
128, 256, and 32 KBytes.
The device is fabricated using SST
’
s advanced CMOS low
power process technology.
The SST30VR021/022/023 has an output enable input for
precise control of the data outputs. It also has two (2) sepa-
rate chip enable inputs for selection of either RAM or ROM
and for minimizing current drain during power-down mode.
The SST30VR021/022/023 is particularly well suited for
use in low voltage (2.7-3.3V) supplies such as pagers,
organizers and other handheld applications.
RAMCS#
OE#
WE#
ROMCS#
DQ7-DQ0
AMS-A0
Note: AMS = Most Significant Address
ROMCS#
OE#
RAM
ROM
WE#
OE#
380 ILL B1.1
A
D
RAMCS#
C
C
F
UNCTIONAL
B
LOCK
D
IAGRAM
2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM
ROM/RAM Combo
SST30VR021 / SST30VR022 / SST30VR023
SST30VR021/022/0232 Mb Mask ROM (x8) + 1 Mb / 2Mb / 256 Kb SRAM (x8) Combo
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST30VR041-500-E-WH | 4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST30VR043-500-E-WH | 4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST30VR021 | 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST30VR021-500-C-U1 | 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST30VR021-500-C-WH | 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST310 | 功能描述:JFET 35V 24mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST310 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N SOT-23 |
| SST310_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET |
| SST310-E3 | 功能描述:JFET 35V 24mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST310-T1 | 功能描述:JFET 35V 24mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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