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參數(shù)資料
| 型號： | SST29SF040-55-4C-WHE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| 中文描述： | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
| 封裝： | 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 |
| 文件頁數(shù)： | 3/25頁 |
| 文件大?。?/td> | 382K |
| 代理商： | SST29SF040-55-4C-WHE |
Data Sheet
2 Mbit / 4 Mbit Small-Sector Flash
SST29SF020 / SST29SF040
SST29VF020 / SST29VF040
3
2005 Silicon Storage Technology, Inc.
S71160-13-000
10/06
Data# Polling (DQ
7
)
When the SST29SF020/040 and SST29VF020/040
devices are in the internal Program operation, any
attempt to read DQ
7
will produce the complement of the
true data. Once the Program operation is completed,
DQ
7
will produce true data. Note that even though DQ
7
may have valid data immediately following the completion
of an internal Write operation, the remaining data outputs
may still be invalid: valid data on the entire data bus will
appear in subsequent successive Read cycles after an
interval of 1 μs. During internal Erase operation, any
attempt to read DQ
7
will produce a ‘0’. Once the internal
Erase operation is completed, DQ
7
will produce a ‘1’. The
Data# Polling is valid after the rising edge of fourth WE#
(or CE#) pulse for Program operation. For Sector- or
Chip-Erase, the Data# Polling is valid after the rising
edge of sixth WE# (or CE#) pulse. See Figure 7 for
Data# Polling timing diagram and Figure 17 for a flow-
chart.
Toggle Bit (DQ
6
)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ
6
will produce alternating ‘0’s
and ‘1’s, i.e., toggling between 0 and 1. When the internal
Program or Erase operation is completed, the toggling will
stop. The device is then ready for the next operation. The
Toggle Bit is valid after the rising edge of fourth WE# (or
CE#) pulse for Program operation. For Sector or Chip-
Erase, the Toggle Bit is valid after the rising edge of sixth
WE# (or CE#) pulse. See Figure 8 for Toggle Bit timing dia-
gram and Figure 17 for a flowchart.
Data Protection
The SST29SF020/040 and SST29VF020/040 devices
provide both hardware and software features to protect
nonvolatile data from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a Write cycle.
V
DD
Power Up/Down Detection: The Write operation is
inhibited when V
DD
is less than 2.5V for SST29SF020/
040. The Write operation is inhibited when V
DD
is less than
1.5V. for SST29VF020/040.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvert-
ent writes during power-up or power-down.
Software Data Protection (SDP)
The SST29SF020/040 and SST29VF020/040 provide
the JEDEC approved Software Data Protection scheme for
all data alteration operations, i.e., Program and Erase. Any
Program operation requires the inclusion of a series of
three- byte sequence. The three-byte load sequence is
used to initiate the Program operation, providing optimal
protection from inadvertent Write operations, e.g., during
the system power-up or power-down. Any Erase operation
requires the inclusion of a six-byte load sequence. These
devices are shipped with the Software Data Protection per-
manently enabled. The specific software command codes
are shown in Table 4. During SDP command sequence,
invalid commands will abort the device to read mode, within
T
RC.
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| SST29SF040-55-4I-WHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29VF020-70-4C-NHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST29SF040-55-4I-NHE | 功能描述:閃存 4M (512Kx8) 55ns Industrial Temp RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29SF040-55-4I-WHE | 功能描述:閃存 512K X 8 55ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-150-4C-EHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-150-4C-NHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-150-4I-NHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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