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參數(shù)資料
| 型號： | SST29SF040-55-4I-WHE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| 中文描述： | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
| 封裝： | 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 382K |
| 代理商： | SST29SF040-55-4I-WHE |
2005 Silicon Storage Technology, Inc.
S71160-13-000
1
10/06
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020 / SST29SF040
SST29VF020 / SST29VF040
FEATURES:
Organized as 256K x8 / 512K x8
Single Voltage Read and Write Operations
– 4.5-5.5V for SST29SF020/040
– 2.7-3.6V for SST29VF020/040
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current:
30 μA (typical) for SST29SF020/040
1 μA (typical) for SST29VF020/040
Sector-Erase Capability
– Uniform 128 Byte sectors
Fast Read Access Time:
– 55 ns for SST29SF020/040
– 70 ns for SST29VF020/040
Latched Address and Data
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 μs (typical)
– Chip Rewrite Time:
4 seconds (typical) for SST29SF/VF020
8 seconds (typical) for SST29SF/VF040
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
TTL I/O Compatibility for SST29SF020/040
CMOS I/O Compatibility for SST29VF020/040
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST29SF020/040 and SST29VF020/040 are 256K
x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-
tured with SST’s proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST29SF020/040 devices write (Program or Erase)
with a 4.5-5.5V power supply. The SST29VF020/040
devices write (Program or Erase) with a 2.7-3.6V power
supply. These devices conform to JEDEC standard pin
assignments for x8 memories.
Featuring
SST29SF020/040 and SST29VF020/040 devices pro-
vide a maximum Byte-Program time of 20 μsec. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at least
10,000 cycles. Data retention is rated at greater than 100
years.
high
performance
Byte-Program,
the
The SST29SF020/040 and SST29VF020/040 devices
are suited for applications that require convenient and eco-
nomical updating of program, configuration, or data mem-
ory. For all system applications, they significantly improve
performance and reliability, while lowering power consump-
tion. They inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. They also improve flexibility
while lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST29SF020/040 and SST29VF020/040 devices are
offered in 32-lead PLCC and 32-lead TSOP packages. The
pin assignments are shown in Figures 2 and 3.
SST29SF/VF020 / 0402Mb / 4Mb (x8)
Byte-Program, Small-Sector flash memories
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| SST29VF020-70-4C-NHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29VF020-70-4C-WHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29VF020-70-4I-NHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29VF020-70-4I-WHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29VF040-70-4C-NHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
相關(guān)代理商/技術(shù)參數(shù) |
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| SST29VE010-150-4C-EHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-150-4C-NHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-150-4I-NHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4C-EH | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4C-EHE | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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