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參數(shù)資料
| 型號： | SST29EE010A-120-4C-EH |
| 元件分類： | DRAM |
| 英文描述： | 128Kx8 EEPROM |
| 中文描述： | 128Kx8 EEPROM |
| 文件頁數(shù)： | 10/26頁 |
| 文件大?。?/td> | 326K |
| 代理商： | SST29EE010A-120-4C-EH |
10
Data Sheet
512 Kbit Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
2001 Silicon Storage Technology, Inc.
S71060-06-000
6/01
301
AC CHARACTERISTICS
TABLE 10: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
FOR
SST29EE512
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST29EE512-70
Min
70
SST29EE512-90
Min
90
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
70
70
30
90
90
40
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
20
20
30
30
0
0
T10.2 301
TABLE 11: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
FOR
SST29LE512
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST29LE512-150
Min
150
SST29LE512-200
Min
200
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
150
150
60
200
200
100
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
30
30
50
50
0
0
T11.1 301
TABLE 12: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
FOR
SST29VE512
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST29VE512-200
Min
200
SST29VE512-250
Min
250
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
200
200
100
250
250
120
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
50
50
50
50
0
0
T12.1 301
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST29EE010A-120-4C-N | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29EE010A-120-4C-NH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29EE010A-120-4C-P | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29EE010A-120-4C-PH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29EE010A-120-4C-U | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
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