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參數(shù)資料
| 型號： | SST28VF040A-200 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 4 Mbit (512K x8) SuperFlash EEPROM |
| 中文描述： | 4兆位（為512k × 8）超快閃EEPROM的 |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 323K |
| 代理商： | SST28VF040A-200 |
Data Sheet
4 Mbit SuperFlash EEPROM
SST28SF040A / SST28VF040A
9
2001 Silicon Storage Technology, Inc.
S71077-04-000
6/01
310
TABLE
8: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
10
10
Units
ms
ms
T8.4 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE
9: C
APACITANCE
(Ta = 25
°
C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T9.0 310
TABLE 10: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
100
100 + I
DD
T10.7 310
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