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參數(shù)資料
| 型號： | SST28VF040A-200 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 4 Mbit (512K x8) SuperFlash EEPROM |
| 中文描述： | 4兆位（為512k × 8）超快閃EEPROM的 |
| 文件頁數(shù)： | 6/24頁 |
| 文件大小： | 323K |
| 代理商： | SST28VF040A-200 |
6
Data Sheet
4 Mbit SuperFlash EEPROM
SST28SF040A / SST28VF040A
2001 Silicon Storage Technology, Inc.
S71077-04-000
6/01
310
TABLE
3: O
PERATION
M
ODES
S
ELECTION
Mode
Read
Byte-Program
Sector-Erase
Standby
Write Inhibit
CE#
V
IL
V
IL
V
IL
V
IH
X
X
V
IL
OE#
V
IL
V
IH
V
IH
X
1
V
IL
X
V
IH
WE#
V
IH
V
IL
V
IL
X
X
V
IH
V
IL
DQ
D
OUT
D
IN
D
IN
High Z
High Z/ D
OUT
High Z/ D
OUT
D
IN
Address
A
IN
A
IN,
See Table 4
A
IN,
See Table 4
X
X
X
See Table 4
Software Chip-Erase
Product Identification
Hardware Mode
V
IL
V
IL
V
IH
Manufacturer
’
s ID (BFH)
Device ID (04H)
A
18
-A
1
=V
IL
, A
9
=V
H
, A
0
=V
IL
A
18
-A
1
=V
IL
, A
9
=V
H
, A
0
=V
IH
See Table 4
See Table 4
See Table 4
Software Mode
SDP Enable & Disable Mode
Reset
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IH
V
IH
V
IL
T3.4 310
1. X can be V
IL
or V
IH
, but no other value.
TABLE
4: S
OFTWARE
C
OMMAND
S
UMMARY
Command Summary
Sector-Erase
Byte-Program
Chip-Erase
6
Reset
Read-ID
Software Data Protect
Software Data Unprotect
Required
Cycle(s)
2
2
2
1
2
7
7
Setup Command Cycle
Type
1
Addr
2,3
W
W
W
W
W
R
R
Execute Command Cycle
Type
1
Addr
2,3
W
SA
W
PA
W
1. Type definition: W = Write, R = Read, X can be V
IL
or V
IH
, but no other value.
2. Addr (Address) definition: SA = Sector Address = A
18
- A
8
, sector size = 256 Bytes; A
7
- A
0
= X for this command.
3. Addr (Address) definition: PA = Program Address = A
18
- A
0
.
4. Data definition: PD = Program Data, H = number in hex.
5. SDP = Software Data Protect mode using 7 Read Cycle Sequence.
a) Y = the operation can be executed with protection enabled
b) N = the operation cannot be executed with protection enabled
6. The Chip-Erase function is not supported on SST28VF040A industrial parts.
7. Address 0000H retrieves the Manufacturer
’
s ID of BFH and address 0001H retrieves the Device ID of 04H.
8. Refer to Figure 11 for the 7 Read Cycle sequence for Software_Data_Protect.
9. Refer to Figure 10 for the 7 Read Cycle sequence for Software_Data_Unprotect.
Data
4
20H
10H
30H
FFH
90H
Data
4
D0H
PD
30H
SDP
5
X
X
X
X
X
8
N
N
N
Y
Y
X
R
7
7
9
T4.3 310
TABLE
5: M
EMORY
A
RRAY
D
ETAIL
Sector Select
A
18
- A
8
Byte Select
A
7
- A
0
T5.0 310
相關PDF資料 |
PDF描述 |
|---|---|
| SST28VF040A-200-4C-EH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4C-NH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4C-PH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4C-WH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4I-EH | 4 Mbit (512K x8) SuperFlash EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST28VF040A-200-4C-EH | 功能描述:電可擦除可編程只讀存儲器 512K X 8 200ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| SST28VF040A-200-4C-EHE | 功能描述:電可擦除可編程只讀存儲器 512K X 8 200ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| SST28VF040A-200-4C-NH | 功能描述:電可擦除可編程只讀存儲器 512K X 8 200ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| SST28VF040A-200-4C-NHE | 功能描述:電可擦除可編程只讀存儲器 512K X 8 200ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| SST28VF040A-200-4C-PH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit (512K x8) SuperFlash EEPROM |
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