參數(shù)資料
型號： SST25VF010-20-4C-QA-DD029
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 1M X 1 SPI BUS SERIAL EEPROM, DSO8
封裝： WSON-8
文件頁數(shù)： 15/22頁
文件大?。?/td> 283K
代理商： SST25VF010-20-4C-QA-DD029
Data Sheet
1 Mbit SPI Serial Flash
SST25VF010
15
2003 Silicon Storage Technology, Inc.
S71233-01-000
8/03
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
O
PERATING
R
ANGE
:
Range
Commercial
Ambient Temp
0°C to +70°C
V
DD
2.7-3.6V
AC C
ONDITIONS
OF
T
EST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
L
= 30 pF
See Figures 19 and 20
TABLE
7: DC O
PERATING
C
HARACTERISTICS
V
DD
= 2.7-3.6V
Symbol
I
DDR
I
DDW
I
SB
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Parameter
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Limits
Max
10
30
400
Test Conditions
CE#=0.1 V
DD
/0.9 V
DD
@20 MHz, SO=open
CE#=V
DD
CE#=V
DD
, V
IN
=V
DD
or V
SS
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
Min
Units
mA
mA
μA
μA
μA
V
V
V
V
1
1
0.8
0.7 V
DD
0.2
V
DD
-0.2
T7.0 1233
TABLE
8: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
V
DD
Min to Read Operation
V
DD
Min to Write Operation
Minimum
10
10
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T8.0 1233
TABLE
9: C
APACITANCE
(Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
OUT1
C
IN1
Description
Output Pin Capacitance
Input Capacitance
Test Condition
V
OUT
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T9.0 1233
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