參數(shù)資料
型號(hào)： SST25VF010-20-4C-QA-DD029
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 1M X 1 SPI BUS SERIAL EEPROM, DSO8
封裝： WSON-8
文件頁(yè)數(shù)： 11/22頁(yè)
文件大?。?/td> 283K
代理商： SST25VF010-20-4C-QA-DD029
Data Sheet
1 Mbit SPI Serial Flash
SST25VF010
11
2003 Silicon Storage Technology, Inc.
S71233-01-000
8/03
Chip-Erase
The Chip-Erase instruction clears all bits in the device to
FFH. A Chip-Erase instruction will be ignored if any of the
memory area is protected. Prior to any Write operation, the
Write-Enable (WREN) instruction must be executed. CE#
must remain active low for the duration of the Chip-Erase
instruction sequence. The Chip-Erase instruction is initiated
by executing an 8-bit command, 60H. CE# must be driven
high before the instruction is executed. The user may poll
the Busy bit in the software status register or wait T
CE
for
the completion of the internal self-timed Chip-Erase cycle.
See Figure 9 for the Chip-Erase sequence.
FIGURE 9: C
HIP
-E
RASE
S
EQUENCE
Read-Status-Register (RDSR)
The Read-Status-Register (RDSR) instruction allows read-
ing of the status register. The status register may be read at
any time even during a Write (Program/Erase) operation.
When a Write operation is in progress, the Busy bit may be
checked before sending any new commands to assure that
the new commands are properly received by the device.
CE# must be driven low before the RDSR instruction is
entered and remain low until the status data is read. Read-
Status-Register is continuous with ongoing clock cycles
until it is terminated by a low to high transition of the CE#.
See Figure 10 for the RDSR instruction sequence.
FIGURE 10: R
EAD
-S
TATUS
-R
EGISTER
(RDSR) S
EQUENCE
CE#
SO
SI
SCK
0 1 2 3 4 5 6
7
60
HIGH IMPEDANCE
MODE 0
MODE 3
1233 F09.1
MSB
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
1233 F10.1
MODE 3
SCK
SI
SO
CE#
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
Status
Register Out
05
MODE 0
HIGH IMPEDANCE
MSB
MSB
相關(guān)PDF資料
PDF描述
SST25VF512-20-4C-SAE 4 Mbit Uniform Sector, Serial Flash Memory
SST25VF010-20-4C-QAE 4 Mbit Uniform Sector, Serial Flash Memory
SST25VF010-20-4C-SA 4 Mbit Uniform Sector, Serial Flash Memory
SST25VF010-20-4C-SA-DD029 4 Mbit Uniform Sector, Serial Flash Memory
SST25VF010-20-4C-SAE 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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SST25VF010204CSA 制造商:Silicon Storage Technology (SST) 功能描述: 制造商:SST 功能描述:
SST25VF010-20-4C-SA 功能描述:閃存 128K X 8 14 s RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST25VF010-20-4C-SA-DD029 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Mbit SPI Serial Flash
SST25VF010-20-4C-SAE 功能描述:閃存 128K X 8 14 s RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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