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參數(shù)資料
| 型號(hào)： | SSP4N60B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 890K |
| 代理商： | SSP4N60B |
2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
S
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
4.0A, 600V, R
DS(on)
= 2.5
@V
GS
= 10 V
Low gate charge ( typical 22 nC)
Low Crss ( typical 14 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220F package isolation = 4.0kV
(Note 6)
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSP4N60B
SSS4N60B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
600
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
4.0
2.5
16
4.0 *
2.5 *
16 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
240
4.0
10
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
100
0.8
33
0.26
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
SSP4N60B
1.25
0.5
62.5
SSS4N60B
3.79
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
SSP Series
G
S
D
S
D
G
TO-220F
SSS Series
G
S
D
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