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參數(shù)資料
| 型號： | SSS6N90A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 3.5 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 386K |
| 代理商： | SSS6N90A |
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
Ο
C
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 900V
Low R
DS(ON)
: 1.829
(Typ.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
900
3.5
2.2
24
30
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
A
Ο
C
O
1
O
1
O
1
O
3
O
2
SSS6N90A
BV
DSS
= 900 V
R
DS(on)
= 2.3
I
D
= 3.5 A
649
3.5
5
1.5
50
0.4
- 55 to +150
300
2.5
62.5
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SSS70N10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SSS70N10A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSS7N55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| SSS7N60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| SSS7N60A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:ADVANCED POWER MOSFET |
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