參數(shù)資料
型號: SSS70N10A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Advanced Power MOSFET
中文描述: 28 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220F, 3 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 652K
代理商: SSS70N10A
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
Operating Temperature
Lower Leakage Current : 10 A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.018 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
V
DSS
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
100
28
19.8
220
+
_
Units
V
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
θ
Ο
C
SSS70N10A
BV
DSS
= 100 V
R
DS(on)
= 0.023
I
D
= 28 A
1568
28
4.9
6.5
49
0.32
- 55 to +175
300
3.09
62.5
--
--
2
0
1999 Fairchild Semiconductor Corporation
Rev. B
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