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參數(shù)資料
| 型號： | SSP1N60A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 1A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 627K |
| 代理商： | SSP1N60A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
DS
= 500V
Lower R
DS(ON)
: 4.046
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
JC
R
CS
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
500
1.5
0.97
5
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
θ
θ
Ο
C
Ο
C
Ο
C
SSP1N50A
BV
DSS
= 500 V
R
DS(on)
= 5.5
I
D
= 1.5 A
113
1.5
3.6
3.5
36
0.29
- 55 to +150
300
3.44
--
62.5
--
0.5
--
3
0
1999 Fairchild Semiconductor Corporation
Rev. B
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|---|---|
| SSP1N60B | 功能描述:MOSFET N-Ch/600V/1a/12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSP1N60B_Q | 功能描述:MOSFET N-Ch/600V/1a/12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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