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參數(shù)資料
| 型號： | SSP2N90A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 900V五（巴西）直|甲（丁）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 643K |
| 代理商： | SSP2N90A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 600V
Lower R
DS(ON)
: 3.892
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
R
R
JC
θ
CS
θ
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
600
2
1.3
6
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
o
C
o
C
o
C
o
C
o
C
o
C
θ
SSP2N60A
BV
DSS
= 600 V
R
DS(on)
= 5.0
I
D
= 2 A
131
2
5.4
3.0
54
0.43
- 55 to +150
300
2.32
--
62.5
--
0.5
--
30
1999 Fairchild Semiconductor Corporation
Rev. B
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