參數(shù)資料
型號: SSP2N60A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 600V的五(巴西)直|甲(?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù): 1/7頁
文件大小: 643K
代理商: SSP2N60A
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 600V
Lower R
DS(ON)
: 3.892
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
R
R
JC
θ
CS
θ
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
600
2
1.3
6
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
o
C
o
C
o
C
o
C
o
C
o
C
θ
SSP2N60A
BV
DSS
= 600 V
R
DS(on)
= 5.0
I
D
= 2 A
131
2
5.4
3.0
54
0.43
- 55 to +150
300
2.32
--
62.5
--
0.5
--
30
1999 Fairchild Semiconductor Corporation
Rev. B
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSP2N60B 功能描述:MOSFET N-Ch/600V/2a/5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSP2N80A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2A I(D) | TO-220AB
SSP2N90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2A I(D) | TO-220AB
SSP2N90A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
SSP-2S-10 制造商:MERRIMAC 制造商全稱:MERRIMAC 功能描述:SINGLE SIDEBAND MODULATORS