參數(shù)資料
型號(hào): SSM6N17FU
廠商: Toshiba Corporation
英文描述: High Speed Switching Applications Analog Switch Applications
中文描述: 高速開關(guān)應(yīng)用模擬開關(guān)應(yīng)用
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 125K
代理商: SSM6N17FU
SSM6N17FU
2002-04-10
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N17FU
High Speed Switching Applications
Analog Switch Applications
Suitable for high-density mounting due to compact package
High drain-source voltage
High speed switching
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
50
V
Gate-Source voltage
V
GSS
±7
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta = 25°C)
P
D
(Note)
200
mW
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
55~150
C
Note: Total rating,Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm
2
× 6)
Marking
Equivalent Circuit
This transistor is a electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-70 (6pin)
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
0.4 mm
0
D M
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
相關(guān)PDF資料
PDF描述
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