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參數(shù)資料
| 型號： | SSM6N29TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.9 to 2.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 152K |
| 代理商： | SSM6N29TU |
SSM6N29TU
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N29TU
High-Speed Switching Applications
1.8 V drive
N-ch 2-in-1
Low ON-resistance:
R
on
= 235 m
(max) (@V
GS
= 1.8 V)
R
on
= 178 m
(max) (@V
GS
= 2.5 V)
R
on
= 143 m
(max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings
(Ta = 25 °C) (Q1 , Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
20
±
12
0.8
1.6
500
150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board. (total dissipation)
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad : 645 mm
2
)
mW
°
C
°
C
55 to 150
Electrical Characteristics
(Ta = 25°C) (Q1 , Q2 Common)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
12 V
V
DS
=
20 V, V
GS
=
0
20
Drain-source breakdown voltage
V
(BR) DSX
10
V
Drain cutoff current
I
DSS
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.4
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
0.6 A
(Note 2)
2.3
3.75
S
I
D
=
0.6 A, V
GS
=
4.0 V
I
D
=
0.4 A, V
GS
=
2.5 V
I
D
=
0.2 A, V
GS
=
1.8 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
(Note 2)
116
143
(Note 2)
(Note 2)
134
160
178
235
Drain-source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
C
iss
268
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
44
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
34
pF
Turn-on time
t
on
9
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.25 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
16
ns
Drain-source forward voltage
V
DSF
I
D
=
0.8 A, V
GS
=
0 V (Note 2)
0.8
1.15
V
Note 2 : Pulse test
Unit: mm
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7 mg (typ.)
0
6
1.7±0.1
2.1±0.1
1
1
2
0
0
3
2
0
5
4
+
0
+
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
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